HMC239AS8ETR: A High-Performance GaAs pHEMT MMIC SMT Switch for 5G and Microwave Applications

Release date:2025-08-27 Number of clicks:52

**HMC239AS8ETR: A High-Performance GaAs pHEMT MMIC SMT Switch for 5G and Microwave Applications**

The relentless drive for higher data rates and lower latency in modern communication systems, particularly with the global rollout of 5G networks, demands RF components that offer exceptional performance, reliability, and integration. The **HMC239AS8ETR**, a GaAs pHEMT MMIC Single-Pole, Double-Throw (SPDT) reflective switch, stands out as a critical solution engineered to meet these stringent requirements in both 5G infrastructure and a broad spectrum of microwave applications.

Fabricated on an advanced Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) process, this switch delivers a superior combination of high isolation and low insertion loss. Operating across a wide frequency band from **100 MHz to 20 GHz**, the HMC239AS8ETR is exceptionally versatile. It achieves a remarkably **low insertion loss of typically 0.5 dB** at 10 GHz and an outstanding **high isolation of 45 dB** at the same frequency. This performance is crucial for preserving signal integrity, maximizing power efficiency, and minimizing crosstalk in dense circuit layouts, which is paramount for 5G base stations, massive MIMO systems, and test and measurement equipment.

Packaged in a compact, industry-standard **8-lead 3mm x 3mm surface-mount technology (SMT) package**, the component is designed for high-volume manufacturing. Its SMT format simplifies PCB assembly, reduces the overall footprint, and enhances repeatability. Furthermore, the switch is characterized by its high linearity, handling up to +33 dBm of input power, which helps mitigate intermodulation distortion in high-power applications. The integrated design also incorporates on-chip circuitry, eliminating the need for external DC blocking capacitors, which simplifies design-in and further reduces board space.

Typical applications span across next-generation systems, including:

* **5G NR Base Stations** (Sub-6 GHz and mmWave bands)

* **Microwave Point-to-Point and Point-to-Multipoint Radios**

* **SATCOM (Satellite Communication) and VSAT Systems**

* **Test and Measurement Instrumentation and Automated Test Equipment (ATE)**

* **Military and Aerospace Radar and EW (Electronic Warfare) Systems**

**ICGOOODFIND**: The HMC239AS8ETR represents a high-performance, highly integrated MMIC solution that addresses the core needs of modern RF design. Its excellent RF performance, combined with a compact SMT package, makes it an ideal choice for designers pushing the boundaries of 5G and microwave technology, enabling more efficient, reliable, and compact system designs.

**Keywords**: **GaAs pHEMT**, **SPDT Switch**, **5G Infrastructure**, **Low Insertion Loss**, **High Isolation**

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