Infineon IPW60R180P7: A High-Performance 600V CoolMOS™ Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of meeting these challenges is Infineon Technologies with its IPW60R180P7, a 600V CoolMOS™ P7 power transistor engineered to set new benchmarks in performance for a wide array of switching applications.

Built upon Infineon’s revolutionary superjunction (SJ) technology, the IPW60R180P7 is designed to minimize key losses that traditionally plague power conversion systems. It boasts an exceptionally low typical on-state resistance (R DS(on)) of just 0.180 Ω, which is a critical factor in reducing conduction losses. This means that the device dissipates less power as heat when fully switched on, leading to cooler operation and higher overall system efficiency.

Beyond its impressive R DS(on), the IPW60R180P7 shines in its dynamic performance. The CoolMOS™ P7 series is renowned for its superior switching characteristics. The transistor features an optimized internal package inductance and an ultra-low gate charge (Q G), which together enable faster switching speeds. This results in significantly lower switching losses, particularly at higher frequencies. The ability to operate efficiently at elevated frequencies allows designers to reduce the size of magnetic components like inductors and transformers, thereby increasing power density and potentially lowering system costs.

The benefits of this technology extend across numerous applications. The IPW60R180P7 is an ideal choice for:

Switched-Mode Power Supplies (SMPS): Including server, telecom, and industrial power supplies where efficiency standards like 80 Plus Titanium are mandatory.

Power Factor Correction (PFC) Stages: Its fast switching capability makes it perfect for both interleaved and single-stage boost PFC circuits.

Solar Inverters and UPS Systems: Where high reliability and efficiency are paramount for maximizing energy harvest and backup runtime.

Motor Control and Lighting: Providing robust and efficient driving for industrial motors and high-intensity discharge lighting.

Furthermore, the device incorporates advanced features that enhance system robustness and design simplicity. It offers excellent avalanche ruggedness and a high body diode dv/dt capability, ensuring reliable operation under stressful conditions like voltage spikes and hard commutation events. This intrinsic robustness contributes to longer product lifespans and improved field reliability.

ICGOOODFIND: The Infineon IPW60R180P7 stands as a pinnacle of power MOSFET design, masterfully balancing ultra-low conduction losses with exceptional switching performance. Its deployment is a decisive step towards creating more compact, efficient, and reliable power electronics for the demanding markets of today and tomorrow.

Keywords: CoolMOS™ P7, Low R DS(on), High-Efficiency Switching, Superjunction Technology, Power Density.