Infineon IPB60R360P7ATMA1 CoolMOS™ P7 600V Power Transistor: Datasheet, Application Notes, and Technical Overview

The relentless pursuit of higher efficiency, power density, and reliability in power electronics has driven the evolution of MOSFET technology. At the forefront of this innovation is Infineon's CoolMOS™ family. The IPB60R360P7ATMA1, a 600V superjunction MOSFET from the CoolMOS™ P7 series, stands as a testament to this progress, engineered to set new benchmarks in performance for a wide array of switching applications.

Technical Overview and Key Features

The CoolMOS™ P7 technology represents a significant leap over its predecessors. The IPB60R360P7ATMA1 is designed to minimize both switching and conduction losses, a critical requirement for high-frequency operation. Its standout feature is its exceptionally low figure-of-merit (R DS(on) x Q G), which directly translates to higher efficiency and the ability to operate at elevated switching frequencies. This allows designers to reduce the size of magnetic components and heat sinks, thereby increasing overall power density.

Key specifications include a maximum drain-source voltage (V DS) of 600V, a continuous drain current (I D) of 11.5A at 100°C, and a remarkably low on-state resistance (R DS(on)) of just 360mΩ at 10V V GS. This low R DS(on) ensures minimal conduction losses, even under high load conditions. The device also features a very low gate charge (Q G) and improved body diode robustness, enhancing its performance in hard-switching and bridge topology applications.

Datasheet Deep Dive

The datasheet for the IPB60R360P7ATMA1 is an essential document for any design engineer. It provides the absolute maximum ratings, ensuring the device operates within its safe operating area (SOA) to prevent failure. Detailed characteristics graphs, such as transfer characteristics, output characteristics, and switching times, offer invaluable insights into the device's behavior under various conditions. The package details are also crucial; this component comes in an TO-263-7 (D2PAK-7) package, which offers an excellent trade-off between power handling capability, creepage distance, and footprint size. The package's seven leads help achieve very low package inductance, which is vital for minimizing voltage overshoot during fast switching.

Application Notes and Circuit Implementation

The CoolMOS™ P7 is ideally suited for a broad spectrum of applications, including:

Switched-Mode Power Supplies (SMPS): Particularly in power factor correction (PFC) stages and LLC resonant converters for servers, telecom, and industrial power systems.

Lighting: High-performance LED driving solutions.

Motor Control: Inverters for driving motors in industrial and consumer appliances.

Solar Inverters: In the DC-DC boosting stage.

When implementing the IPB60R360P7ATMA1, careful attention must be paid to the PCB layout to minimize parasitic inductance. A proper gate driving circuit is paramount; the driver must be capable of sourcing and sinking sufficient current to quickly charge and discharge the gate, leveraging the low Q G to minimize switching losses. Utilizing the application notes from Infineon is highly recommended, as they provide proven guidelines for gate driver selection, thermal management, and optimizing EMI performance.

ICGOODFIND Summary

ICGOODFIND: The Infineon IPB60R360P7ATMA1 is a high-efficiency 600V superjunction MOSFET that exemplifies the advanced CoolMOS™ P7 technology. Its standout combination of ultra-low on-resistance and minimal gate charge makes it a superior choice for designers aiming to maximize power density and efficiency in high-frequency switching applications like server PSUs, industrial SMPS, and solar inverters. It represents an optimal balance of performance, robustness, and cost-effectiveness.

Keywords:

1. CoolMOS™ P7

2. 600V MOSFET

3. High Efficiency

4. Low R DS(on)

5. Power Density