Infineon BSZ22DN20NS3G: 40V Dual N-Channel MOSFET in a Compact SSO-8 Package

Power management in modern electronic designs demands high efficiency, robust performance, and minimal space consumption. Addressing these needs, the Infineon BSZ22DN20NS3G stands out as a highly integrated solution—a 40V dual N-channel MOSFET co-packaged within an ultra-compact SSO-8 package. This device is engineered to deliver superior switching performance and power density for a wide range of applications, from DC-DC converters and motor drives to load switching in computing, automotive, and industrial systems.

The hallmark of the BSZ22DN20NS3G is its exceptional power density. By incorporating two advanced OptiMOS™ MOSFETs in a single SSO-8 housing, Infineon significantly reduces the required PCB footprint compared to using two discrete SMD transistors. This integration is crucial for space-constrained applications like server power supplies, telecom modules, and on-board vehicle controllers, where every square millimeter counts.

Electrical performance is equally impressive. With a maximum drain-source voltage (VDS) of 40V, each MOSFET channel is optimized for low-voltage switching tasks. Key to its efficiency are the very low typical on-resistance (RDS(on)) values, which are as low as 2.2 mΩ at 10 V (VGS). This ultra-low RDS(on) directly translates to reduced conduction losses, lower heat generation, and higher overall system efficiency. The device is also characterized by its low gate charge (Qg), which ensures fast switching transitions and minimizes driving losses in high-frequency circuits—a critical factor for improving the performance of switch-mode power supplies (SMPS).

The choice of the SSO-8 (Shrink Small Outline-8) package is strategic. It offers an excellent thermal performance due to its exposed pad, which allows for efficient heat dissipation away from the silicon dies. This robust thermal capability ensures reliable operation even under high-load conditions, enhancing the long-term durability of the end product.

ICGOOODFIND: The Infineon BSZ22DN20NS3G is a powerhouse of integration, perfectly balancing miniaturization, high efficiency, and thermal performance. It is an ideal choice for designers looking to push the limits of power density without compromising on reliability or electrical characteristics.

Keywords: Power Density, Low RDS(on), SSO-8 Package, Dual N-Channel MOSFET, High-Efficiency Switching