Infineon IRS2104STRPBF 600V High and Low Side Driver IC Datasheet and Application Circuit Design Guide
The Infineon IRS2104STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver specifically engineered for half-bridge and other bridge topologies. This driver IC integrates independent high-side and low-side referenced output channels, both capable of delivering peak currents up to 290mA and 600mA, respectively. Its robust design, featuring a operational voltage of up to 600V, makes it an indispensable component in high-power switching applications such as motor drives, inverters, and switch-mode power supplies (SMPS).
A critical innovation within the IRS2104 is its use of high-voltage level-shift technology. This allows the high-side driver circuitry to operate hundreds of volts above ground, effectively floating with the switching MOSFET. This is crucial for driving the high-side switch in a half-bridge configuration where the source terminal voltage swings between the rail voltage and ground. The IC incorporates a built-in dead-time control (DTC) feature, which is essential for preventing shoot-through currents. Shoot-through occurs when both the high-side and low-side switches in a leg are conducting simultaneously, leading to catastrophic failure due to excessive current. The DTC logic ensures that before one switch is turned on, the other is completely turned off, enhancing system reliability.
The internal architecture includes a pulse generator for the high-side channel, which translates the input logic signal into a correctly level-shifted output for the high-side gate. The device is driven by a single supply voltage (VCC) ranging from 10V to 20V, which is used to generate the required gate drive voltage for both channels. Undervoltage lockout (UVLO) circuits are integrated for both the high-side and low-side sections. These circuits monitor the supply voltages and hold the outputs low if the voltage is insufficient to fully turn on a power MOSFET, preventing inefficient and dangerous operation in the linear region.
Application Circuit Design Guide for a Half-Bridge Inverter
A typical application circuit for the IRS2104 is a half-bridge DC-AC inverter, a fundamental building block for motor drives and uninterruptible power supplies (UPS).
1. Component Selection:
Bootstrapping Circuit: This is the key to generating the floating supply (VB) for the high-side driver. It consists of a bootstrapping diode (DBS) and a bootstrapping capacitor (CBS). The diode must be a fast-recovery type to handle high voltages, and the capacitor must have sufficient capacitance to maintain the VB voltage above the UVLO threshold during the high-side switch's on-time. A typical value is 100nF to 1µF.
Gate Resistors (RG): A series resistor (e.g., 10-100Ω) is required on each gate output (HO and LO) to control the switching speed, dampen ringing, and prevent oscillations caused by parasitic inductance and the MOSFET gate capacitance.
2. Layout Considerations:
Decoupling: Place a high-frequency decoupling capacitor (e.g., 100nF) as close as possible between the VCC and COM pins. A larger electrolytic capacitor (e.g., 10-100µF) should also be used on the same rail for bulk storage.
Current Loops: Keep the high-current, high-switching-speed paths (especially the loop from the bootstrap capacitor through the high-side MOSFET and back to ground) as short and wide as possible to minimize parasitic inductance, which causes voltage spikes and electromagnetic interference (EMI).
Grounding: Separate the high-power ground (from the half-bridge) from the control logic ground. They should be connected at a single star point to avoid noisy power currents from affecting the sensitive logic signals.
3. Operation:
The input signals (HIN and LIN) are provided by a microcontroller or PWM generator. The IRS2104 translates these signals, applies the necessary dead time, and drives the gates of the external high-side and low-side MOSFETs (Q1 and Q2). When the low-side switch (Q2) is on, the switching node (VS) is pulled to ground, allowing the bootstrap capacitor (CBS) to charge through the bootstrap diode (DBS) from the VCC supply. When the high-side switch needs to be turned on, the charged capacitor provides the energy to lift its gate voltage approximately 10-15V above the VS node, ensuring a solid enhancement of the MOSFET.
ICGOODFIND Summary: The Infineon IRS2104STRPBF is a highly reliable and efficient solution for driving half-bridge configurations in high-voltage applications. Its integrated features like dead-time control, undervoltage lockout, and high-noise immunity significantly simplify design complexity, reduce external component count, and enhance system robustness. Proper attention to the bootstrapping circuit and PCB layout is paramount for achieving optimal performance and longevity.
Keywords: Half-Bridge Driver, Level-Shift Technology, Bootstrapping Circuit, Dead-Time Control, Undervoltage Lockout (UVLO)
