Infineon IRFB7534PBF N-Channel Power MOSFET: Key Specifications and Application Notes
The Infineon IRFB7534PBF is a high-performance N-Channel power MOSFET designed using advanced silicon technology to meet the demanding requirements of modern power conversion systems. As part of Infineon's robust Power MOSFET portfolio, this component is engineered for high efficiency and high power density in a wide range of applications.
Key Specifications:
This MOSFET is characterized by its low on-state resistance (RDS(on)) of just 3.7 mΩ maximum at 10 V VGS, which is a critical factor in minimizing conduction losses. The device boasts a drain-to-source voltage (VDS) rating of 100 V, making it suitable for circuits operating at elevated voltages, such as those found in industrial power supplies and motor control systems.
Furthermore, it features a continuous drain current (ID) capability of 195 A at a case temperature of 25°C, demonstrating its ability to handle significant current loads. The component is offered in a TO-220 FullPAK package, which provides enhanced creepage distance and allows for easy mounting to a heatsink, improving thermal performance and system reliability.
Application Notes:
The primary strength of the IRFB7534PBF lies in its versatility. It is an excellent choice for:
Synchronous rectification in switched-mode power supplies (SMPS), particularly in server and telecom power units, where its low RDS(on) directly translates to higher efficiency.
Motor drive and control circuits for industrial equipment and electric vehicles, leveraging its high current handling and voltage capabilities.
DC-DC converter topologies, including high-current buck and boost converters, where fast switching and low losses are paramount.
For optimal performance, careful attention must be paid to the gate driving. A gate driver IC is highly recommended to provide the necessary current to quickly charge and discharge the MOSFET's input capacitance, ensuring fast switching transitions and preventing excessive heat generation. Proper PCB layout is also crucial; minimizing parasitic inductance in the high-current loop is essential to reduce voltage spikes and ensure stable operation.
Thermal management is another critical consideration. Despite its low losses, the dissipated power must be effectively removed. Designers should ensure a low thermal resistance path from the case to an adequate heatsink to maintain the junction temperature within safe operating limits.
ICGOODFIND: The Infineon IRFB7534PBF is a superior N-Channel MOSFET that delivers a compelling combination of very low on-resistance, high current capability, and a 100V voltage rating. Its design is optimized for high-efficiency power conversion, making it a cornerstone component in applications ranging from advanced computing to automotive systems where performance and reliability are non-negotiable.
Keywords: Low RDS(on), Synchronous Rectification, High Current Capability, TO-220 FullPAK, Power Conversion.
